e1 215A Transistors - IGBTs - Modules

Additional Feature：

AVALANCHE RATED (2)
LOW CONDUCTION LOSS, UL RECOGNIZED (2)

Collector Emitter Breakdown Voltage：

1.2kV (2)
600V (2)

Collector Emitter Voltage (VCEO)：

1.2kV (2)
1.9V (2)

Configuration：

Dual Boost Chopper (2)
Single (2)

Current - Collector Cutoff (Max)：

100μA (2)
250μA (2)

Factory Lead Time：

24 Weeks (2)
36 Weeks (2)

Input Capacitance：

4.62nF (2)
9.5nF (2)

Max Collector Current：

100A (2)
215A (2)

Max Power Dissipation：

250W (2)
625W (2)

Number of Elements：

1 (2)
2 (2)

Number of Pins：

3 (2)
4 (2)

Number of Terminations：

25 (2)
4 (2)

Operating Temperature：

-40°C~175°C TJ (2)
-55°C~150°C TJ (2)

Package / Case：

ISOTOP (2)
SP3 (2)

Pin Count：

25 (2)
4 (2)

Terminal Finish：

TIN SILVER COPPER (2)
Tin/Silver/Copper (Sn/Ag/Cu) (2)

Turn Off Time-Nom (toff)：

310 ns (2)
955 ns (2)

Turn On Time：

120 ns (2)
170 ns (2)

Vce(on) (Max) @ Vge, Ic：

1.9V @ 15V, 75A (2)
2.1V @ 15V, 150A (2)

Input Capacitance (Cies) @ Vce：

4.62nF @ 25V (2)
9.5nF @ 25V (2)

NTC Thermistor：

No (2)
yes (2)

Filter：

Transistors - IGBTs - Modules

3 Records

Image	Part	Manufacturer	Description	Price		Stock	Action
	APT150GN120J	Microchip Technology	IGBT MOD 1200V 215A 625W ISOTOP	-	PDF RFQ	34,429 In-stock Warehouse	ADD TO RFQ

Transistors - IGBTs - Modules

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